may.2011.version1.2 magnachipsemiconductorltd . 1 mdu1511Csinglenchanneltrenchmosfet30v ? absolutemaximumratings(ta=25 o c) characteristics symbol rating unit drainsourcevoltage v dss 30 v gatesourcevoltage v gss 20 v continuousdraincurrent (1) t c =25 o c i d 100.0 a t c =70 o c 94.0 t a =25 o c 36.1 (3) t a =70 o c 28.8 (3) pulseddraincurrent i dm 100 a powerdissipation t c =25 o c p d 78.1 w t c =70 o c 50.0 t a =25 o c 5.5 (3) t a =70 o c 3.5 (3) singlepulseavalancheenergy (2) e as 287 mj junctionandstoragetemperaturerange t j ,t stg 55~150 o c thermalcharacteristics characteristics symbol rating unit thermalresistance,junctiontoambient (1) steadystate r ja 22.7 o c/w thermalresistance,junctiontocase steadystate r jc 1.6 mdu1511 singlenchanneltrenchmosfet30v,100.0a,2.4m features v ds =30v i d =100a @v gs =10v r ds(on) <2.4m @v gs =10v <3.3m @v gs =4.5v 100%uiltested 100%rgtested generaldescription the mdu1511 uses advanced magnachip s mosfet technology, which provides high performance in ons tate resistance, fast switching performance and excellen t quality.mdu1511issuitabledevicefordc/dcconve rter andgeneralpurposeapplications. d g s powerdfn56 s s s g g s s s d d d d d d d d
may.2011.version1.2 magnachipsemiconductorltd . 2 mdu1511Csinglenchanneltrenchmosfet30v orderinginformation partnumber temp.range package packing quantity ro hsstatus MDU1511RH 55~150 o c powerdfn56 tape&reel 3000units halogenfree electricalcharacteris tics(t j = 25 o c) characteristics symbol testcondition min typ max u nit staticcharacteristics drainsourcebreakdownvoltage bv dss i d =250a,v gs =0v 30 v gatethresholdvoltage v gs(th) v ds =v gs ,i d =250a 1.3 1.8 2.7 draincutoffcurrent i dss v ds =30v,v gs =0v 1 a t j =55 o c 5 gateleakagecurrent i gss v gs =20v,v ds =0v 0.1 drainsourceonresistance r ds(on) v gs =10v,i d =28a 2.0 2.4 m t j =125 o c 2.9 3.5 v gs =4.5v,i d =24a 2.7 3.3 forwardtransconductance g fs v ds =5v,i d =10a 45 s dynamiccharacteristics totalgatecharge q g(10v) v ds =15v,i d =28a, v gs =10v 38.8 51.8 64.8 nc totalgatecharge q g(4.5v) 18.7 25.0 31.3 gatesourcecharge q gs 9.9 gatedraincharge q gd 9.4 inputcapacitance c iss v ds =15v,v gs =0v, f=1.0mhz 2510 3347 4184 pf reversetransfercapacitance c rss 246 328 410 outputcapacitance c oss 490 653 817 turnondelaytime t d(on) v gs =10v,v ds =15v, i d =28a,r g =3.0 11.2 ns risetime t r 23.2 turnoffdelaytime t d(off) 45.6 falltime t f 18.6 gateresistance rg f=1mhz 1.0 2.0 drainsourcebodydiodecharacteristics sourcedraindiodeforwardvoltage v sd i s =28a,v gs =0v 0.8 1.1 v bodydiodereverserecoverytime t rr i f =28a,dl/dt=100a/s 33.8 50.7 ns bodydiodereverserecoverycharge q rr 22.3 33.5 nc note: 1.surfacemountedfr4boardbyjedec(jesd517) 2.e as istestedatstartingtj=25 ,l=0.1mh,i as =42.0a,v dd =27v,v gs =10v 3.t<10sec.
may.2011.version1.2 magnachipsemiconductorltd . 3 mdu1511Csinglenchanneltrenchmosfet30v fig.5transfercharacteristics fig.1onregioncharacteristics fig.2on resistancevariationwith draincurrentandgatevoltage fig.3on resistancevariationwith temperature fig.4on resistancevariationwith gatetosourcevoltage fig.6 body diode forward voltage variation with source current and temperature 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1 10 100 25 i s [a] v sd [v] 0 1 2 3 4 5 0 4 8 12 16 20 v gs ,gatesourcevoltage[v] t a =25 notes: v ds =5v i d ,draincurrent[a] 50 25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 notes: 1.v gs =10v 2.i d =28.0a r ds(on) ,(normalized) drainsourceonresistance t j ,junctiontemperature[ o c] 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 notes: i d =28.0a t a =25 r ds(on) [m ], drainsourceonresistance v gs ,gatetosourcevolatge[v] 10 20 30 40 50 0 1 2 3 4 v gs =10v v gs =4.5v drainsourceonresistance[m ] i d ,draincurrent[a] 0.0 0.5 1.0 1.5 2.0 0 10 20 30 40 50 5.0v v gs =10v 8.0v 4.0v 3.0v i d ,draincurrent[a] v ds ,drainsourcevoltage[v]
may.2011.version1.2 magnachipsemiconductorltd . 4 mdu1511Csinglenchanneltrenchmosfet30v fig.7gatechargecharacteristics fig.8capacitancecharacteristics fig.9maximumsafeoperatingarea fig.10maximumdraincurrent vs.casetemperature fig.11 transient thermal response curve 0 5 10 15 20 25 0 500 1000 1500 2000 2500 3000 3500 4000 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd notes; 1.v gs =0v 2.f=1mhz c rss c oss c iss capacitance[pf] v ds ,drainsourcevoltage[v] 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 i d ,draincurrent[a] t a ,casetemperature[ ] 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 3 10 3 10 2 10 1 10 0 10 1 notes: dutyfactor,d=t 1 /t 2 peakt j =p dm *z jc *r jc (t)+t c singlepulse d=0.5 0.02 0.2 0.05 0.1 0.01 z ja (t),thermalresponse t 1 ,rectangularpulseduration[sec] 10 1 10 0 10 1 10 2 10 2 10 1 10 0 10 1 10 2 10 3 10s 1s 100ms dc 10ms operationinthisarea islimitedbyr ds(on) singlepulse t j =maxrated t c =25 i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 0 5 10 15 20 25 30 35 40 45 50 55 0 2 4 6 8 10 v ds =15v note:i d =28a v gs ,gatesourcevoltage[v] q g ,totalgatecharge[nc]
may.2011.version1.2 magnachipsemiconductorltd . 5 mdu1511Csinglenchanneltrenchmosfet30v packagedimension powerdfn56(5x6mm) dimensionsareinmillimeters,unlessotherwisespe cified dimension millimeters min max a 0.90 1.10 b 0.33 0.51 c 0.20 0.34 d1 4.50 5.10 d2 4.22 e 5.90 6.30 e1 5.50 6.10 e2 4.30 e 1.27bsc h 0.41 0.71 k 0.20 l 0.51 0.71 0 12
may.2011.version1.2 magnachipsemiconductorltd . 6 mdu1511Csinglenchanneltrenchmosfet30v disclaimer: theproductsarenotdesignedforuseinhostileen vironments,including,withoutlimitation,aircraft ,nuclearpower generation, medical appliances, and devices or syst ems in which malfunction of any product can reasona bly be expected to result in a personal injury. sellers customers using or selling sellers products for us e in such applicationsdosoattheirownriskandagreetof ullydefendandindemnifyseller. magnachipreservestherighttochangethespecific ationsandcircuitrywithoutnoticeatanytime.ma gnachipdoesnotconsiderresponsibility for use of any circuitry other than circuitry entir ely included in a magnachip product. is a registered trademark of magnachip semiconductorltd.
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